恒溫晶振的技術選型
OCXO OvencontrolledCrystalOscillators 恒溫晶振
一、應用
通訊、航空、航天、移動通信、數(shù)字程控交換機、網(wǎng)絡傳輸、接入網(wǎng)、光傳輸、雷達、導航、電子對抗、無線通信、測試設備、鎖相環(huán)電路SDH、SONET、ATM、WLL、PCS基站、蜂窩基站、頻率合成器
二、主要技術指標
1)FrequencyRange頻率范圍:1.00-200.00MHz
2.5MHz,3.2MHz,4.608MHz,4.096MHz,5MHz,5.12MHz,6.4MHz,6.5MHz,6.72996MHz,
8.192MHz,9.216MHz,10MHz,10.24MHz,12MHz,12.24MHz,12.288MHz,12.8MHz,13MHz,14.4MHz,
14.7456MHz,14.85MHz,16MHz,16.32MHz,16.368MHz,16.384MHz,16.8MHz,17MHz,
18.432MHz,19.2MHz,19.44MHz,19.68MHz,19.7985MHz,19.8MHz,20MHz,20.46MHz,20.48MHz,
20.82857MHz,24MHz,24.576MHz,25MHz,25.6MHz,26MHz,26.451788MHz,27MHz,29.952MHz,
32MHz,32.768MHz,33MHz,36.864MHz,38MHz,38.88MHz,40MHz,50MHz,61.44MHz,77.76MHz,
100MHz,120MHz,122.88MHz,140MHz,160MHz,180MHz,200MHz
2)SC Cut OCXO AT Cut OCXO
3)InitialCalibration頻率準確度:A ≤±0.5ppm@25℃ B ≤±0.1ppm @25℃
C≤±0.05ppm @25℃ D ≤±0.01ppm @25℃
4)FrequencyAdjustment頻率調(diào)整: 1≥±0.5ppm 2≥ ±1.0ppm 3≥ ±3.0ppm
4≥±5.0ppm 5 ≥ ±7.0ppm 6≥ ±10ppm
5)ControlVoltage壓控電壓 ：0 - 5V
6)OperatingTemperature工作溫度范圍:E 0-+50℃ F -10-+60℃ G -20-+70℃
H -30-+75℃ I -40-+75℃ J -40-+85℃
7)FrequencyStability溫度頻率穩(wěn)定度: 1 ppb= ppm 1/1000
K ±0.1ppm L ±0.05ppm M ±0.03ppm N ±0.02ppm
O ±0.01ppm P ±0.03ppm Q ±0.005ppm R ±0.001ppm
8)OutputWaveform輸出波形: 1HCMOS 2 TTL 3 ACMOS
4Sine 輸出電平 ≥+2dBm ≥+5dBm @ 50?
諧波抑制 ≤-20dBc ≤-30dBc @50?
雜波抑制 ≤-70dBc ≤-75dBc @50?
5ClippedSine ≥1Vp-p 10k?//10pF
9)SupplyVoltage工作電壓范圍: S 3.3V T 5.0V U 12.0V W 15.0V
10)PowerConsumption功耗：Warmup 開機 ≤3.5W-7.0W
@25℃ 穩(wěn)定 ≤1.2W-3.5W
11)PhaseNoise相位噪聲:
|
Frequency |
10Hz |
100Hz |
1kHz |
10kHz |
100kHz |
|
10.0MHz |
–1120dBc/Hz |
–150dBc/Hz |
–160dBc/Hz |
–165dBc/Hz |
–170dBc/Hz |
|
10.0MHz |
–120dBc/Hz |
–140dBc/Hz |
–150dBc/Hz |
–155dBc/Hz |
–160dBc/Hz |
|
10.0MHz |
–115dBc/Hz |
–135dBc/Hz |
–145dBc/Hz |
–150dBc/Hz |
–155dBc/Hz |
|
10.0MHz |
–100dBc/Hz |
–130dBc/Hz |
–140dBc/Hz |
–145dBc/Hz |
–150dBc/Hz |
±0.5ppm maximum in first year ±2.0ppm maximum for 10 years
|
|
VC-OCXO OCXO |
|
Size(mm) |
DIP 36.0X27.0X16.0mm DIP 30.0X30.0X15.0mm |
|
|
AT CUT SCCUT |
|
Output Frequency Range |
1-100 MHz |
|
Freq Stability Calibration |
≤±0.05ppm (with frequency adjustment) |
|
Vs. Temperature |
±0.03ppm ±0.05ppm ±0.1ppm ±0.2ppm ±0.005ppm ±0.01ppm±0.02ppm |
|
|
0-50°C -10-+60°C -20-+70°C -30-+70°C -40-+70°C -40-+85°C |
|
Vs. Supply Voltage |
≤±0.005ppm |
|
Vs. Load Variation |
≤±0.005ppm |
|
Vs.Aging |
±0.003ppm/day ±0.3ppm/year ±0.0005ppm/day±0.05ppm/year |
|
Supply Voltage (Vdd) |
+5VDC +9VDC +12VDC |
|
Output Level |
Sinewave HCMOS TTL |
|
Frequency Adjustment |
±2.0ppm/0-5V ±0.5ppm/0-5V |
|
Phase Noise 10MHz |
10Hz -115dBc/Hz@1KHz 100Hz -135dBc/Hz@1KHz 1kHz -145dBc/Hz@1KHz 10kHz -150dBc/Hz@1KHz |
|
Supply Consumption |
4.5W(max) when warm-up 1.5W(max) @ 25°C |
|
Warm-up Time |
±0.05ppm,<5min ±0.02ppm,<5min |
|
|
|
|
|
VC-OCXO OCXO |
|
Size(mm) |
DIP 25.0X25.0X13.0mm DIP 20.0X20.0X11.0mm |
|
|
AT CUT SCCUT |
|
Output Frequency Range |
1-100 MHz |
|
Freq Stability Calibration |
≤±0.1ppm (with frequency adjustment) |
|
Vs. Temperature |
±0.05ppm ±0.1ppm ±0.2ppm ±0.01ppm ±0.02ppm ±0.03ppm ±0.05ppm |
|
|
0-50°C -10-+60°C -20-+70°C -30-+70°C -40-+70°C -40-+85°C |
|
Vs. Supply Voltage |
≤±0.005ppm |
|
Vs. Load Variation |
≤±0.005ppm |
|
Vs.Aging |
±0.003ppm/day ±0.3ppm/year ±0.001ppm/day±0.1ppm/year |
|
Supply Voltage (Vdd) |
+5VDC +9VDC +12VDC |
|
Output Level |
Sinewave HCMOS TTL |
|
Frequency Adjustment |
±2.0ppm/0-5V ±0.5ppm/0-5V |
|
Phase Noise 10MHz |
10Hz -115dBc/Hz@1KHz 100Hz -135dBc/Hz@1KHz 1kHz -145dBc/Hz@1KHz 10kHz -150dBc/Hz@1KHz |
|
Supply Consumption |
3.6W(max) when warm-up 1.2W(max) @ 25°C |
|
Warm-up Time |
±0.05ppm,<5min ±0.02ppm,<5min |
|
|
|
|
|
VC-OCXO OCXO |
|
Size(mm) |
DIP 21.0X13.0X11.0mm |
|
Output Frequency Range |
1-100 MHz |
|
Freq Stability Calibration |
≤±0.5ppm (with frequency adjustment) |
|
Vs. Temperature |
±0.05ppm ±0.1ppm ±0.2ppm ±0.3ppm |
|
|
0-50°C -10-+60°C -20-+70°C -30-+70°C -40-+70°C -40-+85°C |
|
Vs. Supply Voltage |
≤±0.05ppm |
|
Vs. Load Variation |
≤±0.05ppm |
|
Vs.Aging |
±0.01ppm/day ±0.5ppm/year |
|
Supply Voltage (Vdd) |
+5VDC +9VDC +12VDC |
|
Output Level |
Sinewave HCMOS TTL |
|
Frequency Adjustment |
±2.0ppm/0-5V |
|
Phase Noise 10MHz |
10Hz -110dBc/Hz@1KHz 100Hz -130dBc/Hz@1KHz 1kHz -140dBc/Hz@1KHz 10kHz -145dBc/Hz@1KHz |
|
Supply Consumption |
3.6W(max) when warm-up 1.2W(max) @ 25°C |
|
Warm-up Time |
±0.5ppm,<2min |
13)Package Outline 封裝、尺寸:
N DIP 21*13*12mm O DIP 20*20*10mm P DIP 25*19*15mm Q DIP 30*30*16mm
R DIP 36*27*16mm S DIP 38*38*16mm T DIP 50*50*16mm U SMD 25*22*14mm
14)StorageTemperature儲存溫度范圍： -55-+90℃
三、產(chǎn)品定型 RTO-10MHZ-SC A 1 J K 1 U N
|
|
頻率 |
晶體 |
準確度 |
調(diào)整 |
溫度范圍 |
穩(wěn)定性 |
波形 |
電壓 |
尺寸 |
|
RTO |
10 |
SC |
A |
1 |
J |
K |
1 |
U |
N |
|
RTO |
10MHZ |
SC cut |
0.5ppm |
0.5ppm |
-40-+85 |
0.1ppm |
HCMOS |
12V |
DIP |