穿芯電容
一、 標(biāo)稱容量Capacitance :
10pF,65pF,100pF,470pF,500pF,1000pF,1200pF,1500pF,1750pF,2000pF,2500pF,2700pF,
3000pF,3300pF,4700pF,5000pF,5500pF,6800pF,7000pF,9000pF,10000pF,0.01μF,0.012μF,
0.015μF,0.018μF,0.022μF,0.025μF,0.027μF,0.028μF,0.045μF,0.050μF,
0.056μF,0.075μF,0.08μF,0.1μF,0.15μF,0.21μF,0.3μF,0.75μF,0.8μF,1μF,
0.015μF,0.060μF,0.062μF,0.150μF,0.200μF,0.250μF,0.250μF,0.300μF,0.450μF,0.500μF,
0.7μF,0.750μF,0.990μF,1.0μF,1.2μF,1.4μF,1.5μF,2.1μF,2.8μF,
4.0μF,5.2μF
101100pF 331330pF 471 470pF
102 1000pF 3323300pF 4724700pF
103 10000pF 33333000pF 47347000pF
1000pF=1nF 1000000pF=1μF 1000nF=1μF 1μF=1000nF=1000000pF 1F=1000000μF
Code |
Capacitancetolerance |
Code |
Capacitancetolerance |
F |
± 1pF |
S |
+ 50%, –20% |
K |
±10% |
Z |
+ 80%, –20% |
M |
±20% |
P |
+100%, – 0% |
二、工作電流Rated Current :
0.06A,0.15A,0.25A,0.3A,0.45A,0.5A,1A,2A,3A,4A,5A,10A,15A,25A,50A,100A
三、額定電壓Rated Voltage :
直流:5V,28V,35V,50V,60V,70V,80V,100V,150V,200V,250V,275V
300V,330V,350V,400V,450V,500V,600V,750V,1250V,2500V
交流:70V,85V,90V,115V,125V,140V,200V,220V,230V,240V,330V,350V
四、耐電壓DielectricWithstandingVoltage :
直流:額定電壓的2.5倍 交流:額定電壓的6倍的直流電壓
五、工作溫度WorkingTemperatureRange:
E:-10-+85℃ F:-25-+85℃ G:-30-+125℃
H:-40-+85℃ I:-55-+85℃ J:-55-+125℃
溫度特征 |
電容變化 |
溫度范圍 |
SL |
SL(0±30ppm/°C) |
–25~+ 85°C |
B |
B(+10~ –10%) |
|
D |
D(+20~ –30%) |
|
E |
E(+20~ –55%) |
|
F |
F(+30~ –80%) |
|
C |
CG(+350~ –1000ppm/°C) |
–55~+125°C |
R |
R(+15~ –15%) |
六、EMI濾波器的構(gòu)成
濾波電容
濾波器所用的電容一般為陶瓷電容。由于其物理結(jié)構(gòu),這種陶瓷電容又稱為穿心式電容。
穿心式電容自電感較普通電容小得多,故而自諧振頻率很高。同時(shí),穿心式設(shè)計(jì),也有效
地防止了高頻信號(hào)從輸入端直接耦合到輸出端。這種低通高阻的組合,在1GHz 頻率范圍內(nèi),
提供了極好的抑制效果。
*簡(jiǎn)單的穿心結(jié)構(gòu)是由內(nèi)外電極和陶瓷構(gòu)成的一個(gè)(C 型)或兩個(gè)電容(Pi 型)。
這種電容的容量可從10pF,工作電壓可達(dá)2000VDC。管式穿心電容因?yàn)槠渫S性,即使在
10GHz 頻率,也不會(huì)產(chǎn)生明顯的自諧振。
穿心電容的介質(zhì)為陶瓷介質(zhì),而陶瓷電容的容量會(huì)隨環(huán)境溫度變化而變化,這種容量變化
會(huì)影響濾波器的濾波截止率。陶瓷電容的容量溫度變化率是由陶瓷介質(zhì)本身決定的。因此,
選擇適當(dāng)?shù)奶沾山橘|(zhì)非常重要。常見陶瓷介質(zhì)及其容量溫度變化率如下:
EIA 介質(zhì)類別 |
COG(NP0) |
X7R |
Z5U |
Y5V |
|
超穩(wěn)定 |
穩(wěn)定 |
一般用途 |
|||
工作溫度范圍 |
-55℃~+125℃ |
-55 ℃~+125 ℃ |
-10℃~+85 ℃ |
-30℃~+85℃ |
|
*大容量溫度變化率 |
0±30ppm/℃ |
± 15 % |
-22% ~+56 % |
-22%~+82% |
|
絕緣電阻Ri |
≥104mΩ |
Cr ≤ 25nF Ri ≤ 4000MΩ |
|||
損耗(tanб) |
Cr>50pF≤0.015 |
<0.025 |
<0.030 |
0.050 |
|
介質(zhì)強(qiáng)度 |
工作電壓 200V 500V >1KV |
施加工作電壓的倍數(shù)(加壓時(shí)間5 秒,充電電流50max ) |
|||
X2.5 |
X2.5 |
X2.5 |
X2.5 |
||
X1.5 |
X1.5 |
X1.5 |
— |
||
X1.5 |
X125 |